Skip Navigation

The Quarterly Journal of Mechanics and Applied Mathematics 1956 9(2):212-223; doi:10.1093/qjmam/9.2.212
© 1956 by Oxford University Press
This Article
Right arrow Full Text (PDF)
Right arrow Alert me when this article is cited
Right arrow Alert me if a correction is posted
Services
Right arrow Email this article to a friend
Right arrow Similar articles in this journal
Right arrow Alert me to new issues of the journal
Right arrow Add to My Personal Archive
Right arrow Download to citation manager
Right arrowRequest Permissions
Google Scholar
Right arrow Articles by HARRIES, J. H. O.
Right arrow Search for Related Content
Social Bookmarking
Add to CiteULike   Add to Connotea   Add to Del.icio.us  
What's this?

AN ANALYSIS OF TRANSISTOR PERFORMANCE AS A FUNCTION OF FREQUENCY AND FOR REALISTIC GEOMETRIES

J. H. OWEN HARRIES

( (Warwick—Bermuda) )

The boundary shapes of actual fused impurity transistors are not such that analytical solutions of the governing differential equations can be found for the flow of the carriers. A relaxation method is described for solving these differential equations for realistic boundary shapes and as a function of frequency. The linear small signal theory of transistor operation is used.


Add to CiteULike CiteULike   Add to Connotea Connotea   Add to Del.icio.us Del.icio.us    What's this?




Disclaimer:
Please note that abstracts for content published before 1996 were created through digital scanning and may therefore not exactly replicate the text of the original print issues. All efforts have been made to ensure accuracy, but the Publisher will not be held responsible for any remaining inaccuracies. If you require any further clarification, please contact our Customer Services Department.